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Lot of 1 pcs
New, never used /NOS / New Old Stock
2T925A
Transistors 2T925A silicon epitaxial-planar structures n-p-n generator.
Designed for use in power amplifiers, frequency multipliers and auto-generators at frequencies of 200 ... 400 MHz at a supply voltage of 12.6 V.
2T925A:
• Structure of the transistor: n-p-n;
• Рк т max - Constant dissipated power of the collector with a heat sink: 5,5 W;
• fgr - Boundary frequency of the transistor current transfer factor for a common emitter circuit: more than 600 MHz;
• Uker max - The maximum collector-emitter voltage for a given collector current and a given resistance in the base-emitter circuit: 36 V (0.1 kΩ);
• Uebo max - The maximum emitter-base voltage for a given reverse current of the emitter and an open collector circuit: 4 V;
• Iк max - Maximum permissible constant collector current: 0,5 A;
• Iк and max - The maximum allowable pulse current of the collector: 1 A;
• Iкбо - Return current of the collector - current through the collector junction with the given collector-base return voltage and the open emitter terminal: no more than 5 mA (36V);
• h21e - Static transistor current transfer factor for circuits with common emitter: more than 8;
• Sk - Capacity of the collector junction: not more than 15 pF;
• Q.r. - Power gain: not less than 6.3 dB;
• Roy - Transistor output power: at least 2 W at 320 MHz;
• tk - Time constant of the response loop at high frequency: no more than 20 ps
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