FAIRCHILD SEMICONDUCTOR BS170_D26Z N CHANNEL MOSFET, 60V, 500mA, TO-92 For Sale

FAIRCHILD SEMICONDUCTOR BS170_D26Z N CHANNEL MOSFET, 60V, 500mA, TO-92


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FAIRCHILD SEMICONDUCTOR BS170_D26Z N CHANNEL MOSFET, 60V, 500mA, TO-92 :
$5

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Fair child &ON Semiconductor -ON Semiconductor-ON Semiconductoris a premier supplier of high-performance, energy-efficient silicon solutions for green electronics. ON Semiconductor's broad portfolio of power and signal management, logic, discrete and custom devices helps customers efficiently solve their design challenges in automotive, communications, computing, consumer, industrial, LED lighting, medical, military/aerospace and power applications

FAIRCHILD SEMICONDUCTOR BS170_D26Z N CHANNEL MOSFET, 60V, 500mA, TO-92

Overview:These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 500mA DC. These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.

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Features & Benefits
  • TechnologyMOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss)60V
  • Current - Continuous Drain (Id) @ 25°C 500mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On)10V
  • Vgs(th) (Max) @ Id 3V @ 1mA Vgs (Max) ±20V
  • Input Capacitance (Ciss) (Max) @ Vds 40pF @ 10V
  • FET Feature-Power Dissipation (Max) 830mW (Ta)
  • Rds On (Max) @ Id, Vgs 5 Ohm @ 200mA, 10V
  • Operating Temperature -55°C ~ 150°C
  • Mounting TypeThrough Hole

What's included:

by FairChild SemiconductorSeries-PackagingCut Tape (CT)Part StatusActive, Same Day ShippingFET TypeN-ChannelTechnologyMOSFET (Metal Oxide)Drain to Source Voltage (Vdss)60VCurrent - Continuous Drain (Id) @ 25°C500mA (Ta)Drive Voltage (Max Rds On, Min Rds On)10VVgs(th) (Max) @ Id3V @ 1mAVgs (Max)±20VInput Capacitance (Ciss) (Max) @ Vds40pF @ 10VFET Feature-Power Dissipation (Max)830mW (Ta)Rds On (Max) @ Id, Vgs5 Ohm @ 200mA, 10VOperating Temperature-55°C ~ 150°C (TJ)Mounting TypeThrough HoleSupplier Device PackageTO-92-3Package / CaseTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)Base Part NumberBS170


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