Fairchild FDV301N Digital N/Ch FET Transistor 220MA 25V SOT23 15 Pieces OM0175 For Sale

Fairchild FDV301N Digital N/Ch FET Transistor 220MA 25V SOT23 15 Pieces OM0175


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Fairchild FDV301N Digital N/Ch FET Transistor 220MA 25V SOT23 15 Pieces OM0175:
$4

  Fairchild FDV301N Digital N/Ch FET Transistor 220MA 25V SOT23 15 Pieces OM0175 Fairchild FDV301N Digital N/Ch FET Transistor 220MA 25V SOT23 15 Pieces OM0175


15 pieces on surface mount tape.

The photo in the title shows our actual stock (a part reel, originally of 3000)

Product Details

Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor

Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.

MOSFET Transistors

(FAIRCHILD is now part of ON Semi)

They offer a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
These MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Specifications Channel Type N Maximum Continuous Drain Current 220 mA Maximum Drain Source Voltage 25 V Package Type SOT-23 Mounting Type Surface Mount Pin Count 3 Maximum Drain Source Resistance 4 Ω Channel Mode Enhancement Minimum Gate Threshold Voltage 0.7V Maximum Power Dissipation 350 mW Transistor Configuration Single Maximum Gate Source Voltage +8 V Number of Elements per Chip 1 Typical Gate Charge @ Vgs 0.49 nC @ 4.5 V Height 0.93mm Maximum Operating Temperature +150 °C Width 1.3mm Length 2.92mm Minimum Operating Temperature -55 °C

Mfr Package Description SOT-23, 3 PIN

Lead Free Yes EU RoHS Compliant China RoHS Compliant

Terminal Form GULL WING

Terminal Finish MATTE TIN

Terminal Position DUAL

Number of Terminals 3

Package Body Material PLASTIC/EPOXY

Configuration SINGLE WITH BUILT-IN DIODE

Number of Elements 1 Transistor

Application SWITCHING Transistor

Element Material SILICON

Power Dissipation Ambient-Max 0.3500 W

Channel Type N-CHANNEL FET

Technology METAL-OXIDE SEMICONDUCTOR

Operating Mode ENHANCEMENT

Transistor Type GENERAL PURPOSE SMALL SIGNAL

Drain Current-Max (ID)0.2200 ADS

Breakdown Voltage-Min 25 V

Drain-source On Resistance-Max 5 ohm

For data sheet copy and paste:-

 

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Please contact us if you have any questions.

Service

We purchase Surplus Stock. If you or your company have items similar to the above, or indeed any electronic components surplus to requirements, please contact us with details as we are keen to increase our stock profile.

  Product Details MOSFET Transistors Specifications Channel Type N 220 mA 25 V Package Type SOT-23 Mounting Type Surface Mount Pin Count 3 4 Ω Channel Mode Enhancement 0.7V Maximum Power Dissipation 350 mW Transistor Configuration Single +8 V 1 Typical Gate Charge @ Vgs 0.49 nC @ 4.5 V Height 0.93mm +150 °C Width 1.3mm Length 2.92mm -55 °C Terminal Form GULL WING Terminal Finish MATTE TIN Terminal Position DUAL Number of Terminals 3 Element Material SILICON   Dispatch time: Payment PayPal Product Details MOSFET Transistors Specifications Channel Type N 220 mA 25 V Package Type SOT-23 Mounting Type Surface Mount Pin Count 3 4 Ω Channel Mode Enhancement 0.7V Maximum Power Dissipation 350 mW Transistor Configuration Single +8 V 1 Typical Gate Charge @ Vgs 0.49 nC @ 4.5 V Height 0.93mm +150 °C Width 1.3mm Length 2.92mm -55 °C Terminal Form GULL WING Terminal Finish MATTE TIN Terminal Position DUAL Number of Terminals 3 Element Material SILICON   Dispatch time: Payment PayPalProduct Details MOSFET Transistors Specifications Channel Type N 220 mA 25 V Package Type SOT-23 Mounting Type Surface Mount Pin Count 3 4 Ω Channel Mode Enhancement 0.7V Maximum Power Dissipation 350 mW Transistor Configuration Single +8 V 1 Typical Gate Charge @ Vgs 0.49 nC @ 4.5 V Height 0.93mm +150 °C Width 1.3mm Length 2.92mm -55 °C Terminal Form GULL WING Terminal Finish MATTE TIN Terminal Position DUAL Number of Terminals 3 Element Material SILICON   Dispatch time: Payment PayPal


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