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New, never used /NOS / New Old Stock
KT815B
Transistors KT815B silicon mesa structure epitaxial planar npn amplifier.
KT815B:
• The structure of transistor: npn;
• Pk t max - constant power dissipation collector heatsink: 10W;
• fgr - Cutoff frequency of current transfer ratio of the transistor for the circuit with common emitter: not less than 3 MHz;
• Uker max - The maximum collector-emitter voltage at a given current collector and a predetermined resistance in the base-emitter voltage: 50 V (0,1kOm);
• Uebo max - Maximum voltage emitter-base reverse current at a given emitter and collector open circuit: 5;
• Ik max - The maximum permissible continuous collector current of 1.5 A;
• Ik and max - The maximum permissible pulse collector current: 3 A;
• Ikbo - Reverse collector current - the current through the collector junction reverse voltage for a given collector-base and emitter open output: less than 0.05 mA (40V);
• h21e - Static current transfer ratio of the transistor circuit for a common-emitter: 40;
• CK - Capacity of the collector junction: no more than 60 pF;
• Rke us - saturation resistance between the collector and emitter: no more than 1.2 Ohms
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