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New, never used /NOS / New Old Stock
Transistors KT851V silicon epitaxial planar structure pnp switching.
Designed for use in power amplifiers and switching devices.
The main technical characteristics of the transistor KT851V:
• The structure of the transistor: pnp;
• Pk t max - Dissipated power collector with heat: 25 W;
• fgr - Cut-off frequency of the transistor current gain for the common-emitter: no less than 20 MHz;
• Ukbo max - Maximum voltage collector-base for a given reverse current collector and emitter open circuit: 180 V;
• Uebo max - Maximum voltage emitter-base junction reverse current at a given emitter and collector open circuit: 5 V;
• Ik max - Maximum DC Collector Current: 2 A;
• Ik and max - Maximum pulse collector current: 3 A;
• Ikbo - Reverse collector current - the current through the collector junction reverse voltage for a given collector-base and open emitter output: up to 500 mA (180 V);
• h21e - Static current transfer ratio of the transistor to the common-emitter: 20 ... 200;
• CK - collector junction capacity: no more than 40 pF;
• Rke us - saturation resistance between the collector and emitter: no more than 2 ohms;
• tras - The decay time: not more than 1400 ns
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