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KT855B
Transistors KT855B silicon epitaxial planar structure pnp amplification.
KT855B:
• The structure of transistor: pnp;
• Pk t max - constant power dissipation collector heatsink: 40W;
• fgr - Cutoff frequency of current transfer ratio of the transistor for the circuit with common emitter: no less than 5 MHz;
• Ukbo max - maximum collector-base voltage for a given reverse current collector and emitter open circuit: 150 V;
• Uebo max - maximum voltage of the emitter-base reverse current at a given emitter and collector open circuit: 5;
• Ik max - maximum permissible continuous collector current: 5 A;
• Ik and max - maximum permissible pulse collector current: 8 A;
• Ikbo - Reverse collector current - the current through the collector junction reverse voltage for a given collector-base and emitter open output: up to 1000 mA (150V);
• h21e - Static current transfer ratio of the transistor circuit for a common-emitter: 20;
• CK - Capacity of the collector junction: not more than 200 pF;
• Rke us - saturation resistance between the collector and emitter: no more than 0.5 Ohms
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