SAMSUNG KM29W16000ATS 16Mbit 2M x 8-Bit NAND Flash Memory 44TSOP2 **NEW** For Sale
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SAMSUNG KM29W16000ATS 16Mbit 2M x 8-Bit NAND Flash Memory 44TSOP2 **NEW**:
$6.99
*** NEW & ORIGINAL *** 1 PieceFEATURES
Voltage Supply ~ 5.5V Organization - Memory Cell Array 8bit - Data Register 8)bit x8bit Automatic Program and Erase - Page Program 8)Byte - Block Erase 128)Byte - Status Register 264-Byte Page Read Operation - Random Access : 10µ s(Max.) - Serial Page Access : 80ns(Min.) Fast Write Cycle Time - Program time 250µs(typ.) - Block Erase time : 2ms (typ.) Command/Address/Data Multiplexed I/O port Hardware Data Protection - Program/Erase Lockout During Power Transitions Reliable CMOS Floating-Gate Technology - Endurance : 1M Program/Erase Cycles - Data Retention : 10 years Command Register Operation 44(40) - Lead TSOP Type 0.8 mm pitch) - Forward Type
The a 2M(2,097,152)x8bit NAND Flash Memory with a spare 64K(65,536)x8bit. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. A program operation programs the 264-byte page in typically 250µs and an erase operation can be performed in typically a 4K-byte block. Data in the page can be read out at 80ns cycle time per byte. The I/O pins serve as the ports for address and data input/output as well as command inputs. The on-chip write controller automates all program and erase system functions, including pulse repetition, where required, and internal verify and margining of data. Even the write-intensive systems can take advantage of the KM29W16000A extended reliability of 1,000,000 program/erase cycles by providing either ECC(Error Correction Code) or real time mapping-out algorithm. These algorithms have been implemented in many mass storage applications and also the spare of a page combined with the other 256 bytes can be utilized by system-level ECC. The is an optimum solution for large nonvolatile storage application such as solid state storage, digital voice recorder, digital still camera and other portable applications requiring nonvolatility.
Pin Name ~ I/O7 CLE ALE WE WP GND R/B VCC VCCQ VSS N.C Pin Function Data Inputs/Outputs Command Latch Enable Address Latch Enable Chip Enable Read Enable Write Enable Write Protect Ground Input Ready/Busy output Power(2.7V~5.5V) Output Butter Power(2.7V~5.5V) Ground No Connection
NOTE : Connect all V CC,VccQ and VSS pins of each device to power supply outputs. Do not leave VCC or VSS disconnected.
X-Buffers Latches & Decoders Y-Buffers Latches & DecodersPage Register & S/A Y-Gating Command Register I/O Buffers & Latches VccQ Vss I/0 0 Global Buffers I/0 7
1 Page = 264 Byte 1 Block x 16 Pages + 128) Bytes 1 Device x 512 Blocks = 16.5 MbitsRelated Items:
SAMSUNG KM29W16000ATS 16Mbit 2M x 8-Bit NAND Flash Memory 44TSOP2 **NEW**
$6.99
