Transistors silicon 3P321A-2 USSR Lot of 2 pcs For Sale
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Transistors silicon 3P321A-2 USSR Lot of 2 pcs:
$6.47
Transistors silicon 3P321A-2
USSR
Lot of 2 pcs
New, never used /NOS / New Old Stock/
3P321A-2
Transistor field 3P321A-2 arsenide-gallium planar ion-alloyed with n-channel and Schottky barrier super-high-frequency amplifier with a normalized noise factor at 8 GHz.
3P321A-2:
The maximum permissible continuous power dissipation of the field effect transistor is 30 mW
Maximum permissible operating frequency of 8 GHz FET
The maximum allowable drain-source voltage is 3 V
The maximum permissible gate-drain voltage is 4 V
Maximum allowable gate-source voltage 3 V
Field FET cutoff voltage. The voltage between the gate and the source of a transistor with a p-n junction or an isolated gate operating in a depletion mode, at which the drain current reaches a predetermined low value of 1.5 ... 4.5
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