Transistors silicon KP748B = IRF611 USSR Lot of 6 pcs For Sale

Transistors silicon  KP748B = IRF611 USSR  Lot of 6 pcs
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Transistors silicon KP748B = IRF611 USSR Lot of 6 pcs:
$6.47

Transistors silicon KP748B = IRF611

USSR

Lot of 6 pcs

New, never used /NOS / New Old Stock/


KP748B

Silicon epitaxial-planar field effect transistors with isolated gate, enrichment of the n-channel, and built-in reverse-coupled diode.

KP748B are designed for use in secondary power supplies with transformerless input, in regulators, stabilizers and converters with continuous pulse control, computer power units, motor control circuits and other units and radioelectronic equipment units.


• P MAX - maximum permissible constant power dissipation of the field effect transistor 36 W

• UCI MAX - maximum allowable drain-source voltage 150 V

• UZI MAX - maximum permissible gate-source voltage ± 20 V

• IС MAX - the maximum allowable drain current of the field-effect transistor 3,3 A

• RCI off - drain-source resistance in the open state of the field-effect transistor. Resistance between the drain and source in the open state of the transistor at a given drain-source voltage, less than the saturation voltage <1.5 Ohm

• IZ UT - gate leakage current. The gate current at a given voltage between the gate and the rest of the terminals closed to each other ± 100 nA

• S is the steepness of the FET. The ratio of the change in drain current to a change in the gate voltage when AC short-circuited at the output of the transistor in a circuit with a common source> 0.8 A / V

• C11I - input capacitance of the FET. Capacitance between gate and source with AC short-circuit at the output with common source <250 pF

• C12И - throughput capacitance of the field-effect transistor. Capacitance between gate and drain with AC short-circuit at input in common-source circuit <210 pF

• C22I is the output capacitance of the FET. The capacitance between the drain and the source in case of an AC short-circuit at the input in the common-source circuit is <70 pF

• tvl - switching time of the FET <25.2 ns

• t off - turn-off time of the FET <22.9 ns

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