Transistors silicon KT837R = 2SB434, 2SB434G, 2SB435G USSR Lot of 1 pcs For Sale

Transistors silicon KT837R = 2SB434, 2SB434G, 2SB435G USSR  Lot of 1 pcs
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Transistors silicon KT837R = 2SB434, 2SB434G, 2SB435G USSR Lot of 1 pcs:
$1.50

Transistors silicon KT837R = 2SB434, 2SB434G, 2SB435G

USSR

Lot of 1 pcs

New, never used /NOS / New Old Stock


KT837R

KT837R transistors silicon epitaxial-diffusion structure pnp switching.


KT837R:

• The structure of the transistor: pnp;

• Pk t max - collector power dissipation to the heat sink 55 W;

• fgr - Cutoff frequency current transfer ratio of the transistor circuit for the common-emitter: not less than 1 MHz;

• Ukbo max - Maximum voltage collector-base for a given reverse collector current and open-circuit emitter: 60;

• Uebo max - Maximum voltage of the emitter-base for a given reverse current of the emitter and collector open circuit: 5 V;

• Ik max - Maximum allowable DC Collector Current: 7.5 A;

• Ikbo - Reverse Collector Current - current through the collector junction for a given reverse voltage collector-base and open emitter output: no more than 0.15 mA;

• h21e - Static current gain of the transistor for the common-emitter: 20 ... 80;

• Rke us - saturation resistance between the collector and emitter: no more than 0.3 ohms


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