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Transistors silicon KT837R = 2SB434, 2SB434G, 2SB435G
USSR
Lot of 1 pcs
New, never used /NOS / New Old Stock
KT837R
KT837R transistors silicon epitaxial-diffusion structure pnp switching.
KT837R:
• The structure of the transistor: pnp;
• Pk t max - collector power dissipation to the heat sink 55 W;
• fgr - Cutoff frequency current transfer ratio of the transistor circuit for the common-emitter: not less than 1 MHz;
• Ukbo max - Maximum voltage collector-base for a given reverse collector current and open-circuit emitter: 60;
• Uebo max - Maximum voltage of the emitter-base for a given reverse current of the emitter and collector open circuit: 5 V;
• Ik max - Maximum allowable DC Collector Current: 7.5 A;
• Ikbo - Reverse Collector Current - current through the collector junction for a given reverse voltage collector-base and open emitter output: no more than 0.15 mA;
• h21e - Static current gain of the transistor for the common-emitter: 20 ... 80;
• Rke us - saturation resistance between the collector and emitter: no more than 0.3 ohms
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