Westinghouse Thyristor Semiconductor Device P/N 507C638H87 For Sale
Westinghouse Thyristor Semiconductor Device P/N 507C638H87 :
$57.75
Westinghouse Thyristor Semiconductor Device P/N 507C638H87
Specifications:
Part: 507C638H87 / Alt. A1-58101 / Alt. WX809E87
NSN: 5961-00-068-9547
Manufacturer: Westinghouse Electric
Additional Information:
Inclosure Material: Metal
Overall Length: 1.125 inches nominal
Mounting Facility Quantity: 1
Internal Configuration: Junction contact
Joint Electronic Device Engineering Council/Jedec/Case Outline
Designation: TO-94
Mounting Method: Threaded stud
Features Provided: Hermetically sealed case
Overall Width Across Flats: 1.062 inches nominal
Nominal Thread Size: 0.500 inches
Semiconductor Material: Silicon
Voltage Rating IN Volts PER Characteristic: 250.0 maximum
repetitive peak off-state voltage and 300.0 maximum reverse voltage, peak
Current Rating PER Characteristic: 50.00 amperes source cutoff current preset
Special Features: Junction pattern arrangement: npnp
Thread Series Designator: UNF
Terminal Type AND Quantity: 1 solder stud and 2 uninsulated
wire lead
The thyristor is a four-layered, three terminal semiconductor device, with each layer consisting of alternately N-type or P-type material, for example P-N-P-N.
The main terminals, labelled anode and cathode, are across all four layers.
The control terminal, called the gate, is attached to p-type material near the cathode. (A variant called an SCS—Silicon Controlled Switch—brings all four layers out to terminals.)
The operation of a thyristor can be understood in terms of a pair of tightly coupled bipolar junction transistors, arranged to cause a self-latching action.
This item is new with original packaging only opened for photos. New Surplus. See photos for exact item.
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