10pcs. KT819V == BD952= 2N6133 =2SB553 70V 60Wt 10A N-P-N silicon RUSSIA For Sale
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10pcs. KT819V == BD952= 2N6133 =2SB553 70V 60Wt 10A N-P-N silicon RUSSIA:
$13.00
1 - Lot 10pcs. KT819V =BD204= BD708= BD952= 2N6133= 2N6310= 2N6133= 2SB1019= 2SB553= BDT94= RCA1C08 70V 60Wt 10A N-P-N silicon RUSSIAWecan specify a SMALLER AMOUNT in the customs declaration !!!
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KT819VSilicon mesaepitaxial-planar n-p-n switching transistors.
Transistors KT819A, KT819B, KT819V, KT819G are designed for use in amplifiers and switching devices.
The case is plastic with rigid leads.
The mass of the transistor is not more than 2.5 g.
Housing type: KT-28 (TO-220).
Technical specifications: AA0.336. 189 TU.Main technical characteristics
of the kt819v transistor • * transistor Structure: n-p-n;
• PK max - constant collector power dissipation: 1.5 W;
* PK t max-Constant dissipated power of the collector with a heat sink: 60 W;
* FGR - the Limit frequency of the transistor current transfer coefficient for a common emitter circuit: at least 3 MHz;
* Ucer max - maximum collector-emitter voltage at a given collector current and a given resistance in the base-emitter circuit: 70 V (0.1 kOhm);
* Uebo max - Maximum emitter-base voltage at a given reverse current of the emitter and open collector circuit: 5 V;
* IK max - maximum permissible DC collector current: 10 A;
* IK and max - maximum permissible collector pulse current: 15 A;
* Icbo - reverse collector current - current through the collector junction at a given reverse collector-base voltage and an open emitter terminal: no more than 1 mA (40V);
* h21e-Static current transfer coefficient of the transistor for circuits with a common emitter: more than 15;
* Rke us-saturation Resistance between collector and emitter: no more than 0.4 Ohms
Technical characteristics of transistors KT819A, KT819B, KT819V, KT819G:
type
of transistor Structure Limit values of parameters at TP=25°C parameter Values at TP=25°C TP
max
Tmax IK max IK.
I max UKER max
(UKE0 max) UKB0 max UEB0 max PK max
(PK. T. max) h21e UKE
NAS. IKBO IEBO f gr. KSH SK SE
A a V V V W V mA mA MHz dB pF pF °C °C
KT819A n-p-n 10 15 40 - 5 1,5 (60) >15 <1 - 1 >3 - <1000 <2000 125 -40...+100
KT819B n-p-n 10 15 50 - 5 1,5 (60) >20 <2 - 1 >3 - <1000 <2000 125 -40...+100
KT819B n-p-n 10 15 70 - 5 1,5 (60) >15 <2 - 1 >3 - <1000 <2000 125 -40...+100
KT819G n-p-n 10 15 100 - 5 1,5 (60) >12 <2 - 1 >3 - <1000 <2000 125 -40...+100Symbols for electrical parameters of transistors:
* IK max - the maximum permissible DC current of the transistor collector.
* IC. I. max - the maximum permissible pulse current of the transistor collector.
* UCER max - the maximum voltage between the collector and emitter for a given collector current and resistance in the base-emitter circuit.
* UKE0 max - the maximum voltage between the collector and the emitter of the transistor for a given collector current and base current equal to zero.
* UQB0 max - maximum collector-base voltage at a given collector current and emitter current equal to zero.
* UEB0 max - the maximum permissible emitter-base DC voltage at a collector current of zero.
* PK max - the maximum allowable constant power dissipated on the transistor collector.
* PK. T. max - the maximum permissible constant power dissipated on the collector of a transistor with a heat sink.
* h21e-static current transfer coefficient of a bipolar transistor.
* UKE us. - saturation voltage between the collector and emitter of the transistor.
* ICBO-reverse collector current. Current through the collector junction at a given reverse collector-base voltage and an open emitter terminal.
In ABO - reverse current of the emitter. Current through the emitter junction at a given reverse emitter-base voltage and an open collector terminal.
* f gr - limit frequency of the current transfer coefficient.
* KSH - noise coefficient of the transistor.
• SK - capacity of the collector junction.
• FE is the capacitance of the collector junction.
• TA max is the maximum allowable junction temperature.
* T max - maximum permissible ambient temperature.
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