Genuine RCA TO-3 2N5039 Power Amp NPN Transistors For Sale

Genuine RCA TO-3 2N5039 Power Amp NPN Transistors


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Genuine RCA TO-3 2N5039 Power Amp NPN Transistors:
$79

Removed from sockets of new surplus equipment.2N5039Silicon NPN TransistorsPower Amp, SwitchTO−3 Type PackageDescription:The 2N5038 and 2N5039 are silicon NPN transistors in a TO−3 type package that have fast switchingspeeds and high current capacity that ideally suit these devices for use in switching regulators, inverters,wide−band amplifiers and power oscillators in industrial and commercial applications.Features:High Speed: tf = 0.5s Max.High Current: IC(max) = 30ALow Collector−Emitter Saturation Voltage: VCE(sat) = 2.5V max @ IC = 20AAbsolute Maximum Ratings:Collector−Base Voltage, VCBO2N5039 120VCollector−Emitter Voltage, VCEV2N5038 150V2N5039 120VEmitter−Base Voltage, VEBO 7VCollector Current, ICContinuous 20APeak (Note 1) 30AContinuous Base Current, IB 5ATotal Device Dissipation (TC = +25C), PD 140WDerate Above 25C 0.8W/ COperating Junction Temperature Range, TJ .................................. −65 to +200CStorage Temperature Range, Tstg −65 to +200CMaximum Thermal Resistance, Junction−to−Case, RthJC ........................... 1.25C/WNote 1. Pulse Test: Pulse Width  10ms, Duty Cycle  50%.Electrical Characteristics: (TC = +25C unless otherwise specified)Parameter Symbol Test Conditions Min Typ Max UnitOFF CharacteristicsCollector−Emitter Sustaining Voltage2N5038 VCEO(sus) IC = 200mA, IB = 0, Note 2 90 − − V2N5039 75 − − VCollector Cutoff Current2N5038 ICEX VCE = 140V VEB(off) = 1.5V − − 50 mA2N5039 VCE = 110V − − 50 mA2N5038 VCE = 100V VEB(off) = 1.5V,TC = +150C− − 10 mA2N5039 VCE = 85V − − 10 mANote 2. Pulse Test: Pulse Width  300s, Duty Cycle  2%.Electrical Characteristics (Cont’d): (TC = +25C unless otherwise specified)Parameter Symbol Test Conditions Min Typ Max UnitEmitter Cutoff Current2N5038 IEBO VBE = 5V, IC = 0 − − 5 mA2N5039 − − 15 mABoth VBE = 7V, IC = 0 − − 50 mAON Characteristics (Note 2)DC Current Gain2N5038 hFE VCE = 5V IC = 12A 20 − 1002N5039 IC = 10A 20 − 100Collector−Emitter Saturation Voltage VCE(sat) IC = 20A, IB = 5A − − 2.5 VBase−Emitter Saturation Voltage VBE(sat) IC = 20A, IB = 5A − − 3.3 VDynamic CharacteristicsMagnitude of Common−EmitterSmall−Signal Short−CircuitForward Current Transfer Ratio|hfe| VCE = 10V, IC = 2A, f = 5MHz 12 − −Switching Characteristics (Resistive Load)2N5038Rise Time tr VCC = 30V, IC = 12A, IB1 = IB2 = 1.2A − − 0.5 sStorage Time ts − − 1.5 sFall Time tf − − 0.5 s2N5039Rise Time tr VCC = 30V, IC = 10A, IB1 = IB2 = 1A − − 0.5 sStorage Time ts − − 1.5 sFall Time tf − − 0.5 sNote 2. Pulse Test: Pulse Width  300s, Duty Cycle  2%.1.187 (30.16).875 (22.2)Dia (7.93) Min .040 (1.02).135 (3.45) Max.350 (8.89)EmitterBase Collector/Case.215 (5.45).525 (13.35) R Max


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