NTE 5375 Silicon Controlled Rectifier(SCR),1200V 275Amp HI SPEED Switching,TO-93 For Sale

NTE 5375 Silicon Controlled Rectifier(SCR),1200V 275Amp HI SPEED Switching,TO-93


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NTE 5375 Silicon Controlled Rectifier(SCR),1200V 275Amp HI SPEED Switching,TO-93:
$175.00

NTE 5375 Silicon Controlled Rectifier(SCR),1200V 275Amp HI SPEED Switching,TO-93
Description NTE5375Silicon Controlled Rectifier (SCR)for High Speed Switching,275 Amp, TO93
NTE5374 & NTE5375Maximum Ratings and Electrical Characteristics: (TJ = +125°C unless otherwise specified)Repetitive Peak Voltages, VDRM, VRRMNTE5374 . . . . . . . . . . . . . . . 600VNTE5375 . . . . . . . . . . . . . . . 1200VNon−Repetitive Peak Off−State Voltage, VDSMNTE5374 . . . . . . . . . . . . . . . 600VNTE5375 . . . . . . . . . . . . . . . 1200VNon−Repetitive Peak Reverse Blocking Voltage, VRSMNTE5374 . . . . . . . . . . . . . . . . 700VNTE5375 . . . . . . . . . . . . . . . . . 1300VAverage On−State Current (TC = +85°C, half sinewave), IT(AV)NTE5374 . . . . . . . . . . . . . . . . . 195ANTE5375 . . . . . . . . . . . . . . . . . .175ARMS On−State Current, IT(RMS) . . . . . . . . 355AContinuous On−State Current, IT . . . . . . . . 355APeak One−Cycle Surge (Non−Repetitive) On−State Current, ITSM(t = 10ms, 60% VRRM re−applied)NTE5374 . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4700ANTE5375 . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3250A(t = 10ms, VR ≤ 10V)NTE5374 . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5170ANTE5375. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3575AMaximum Permissible Surge Energy, I2t(t = 10ms, VR ≤ 10V)NTE5374 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 134000A2secNTE5375 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 63900A2sec(t = 3ms, VR ≤ 10V)NTE5374 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 98000A2secNTE5375 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 47000A2secPeak Forward Gate Current (Anode Positive with Respect to Cathode), IFGM . . . . . 18APeak Forward Gate Voltage (Anode Positive with Respect to Cathode), VFGM . . . . . 12VPeak Reverse Gate Voltage, VRGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5VAverage Gate Power, PG(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5WPeak Gate Power (100μs Pulse Width), PGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .60WRate of Rise of Off−State Voltage (To 80% VDRM, Gate Open−Circuit), dv/dt . . . . . .200V/μsMaximum Ratings and Electrical Characteristics (Cont’d): (TJ = +125°C unless otherwise specified)Rate of Rise of On−State Current, di/dt(Gate Drive 20V, 20Ω with tr ≤ 1μs, Anode voltage ≤ 80% VDRM)Repetitive . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500A/μsNon−Repetitive . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1000A/μsPeak On−State Voltage (ITM = 600A), VTMNTE5374 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.8VNTE5375 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2.074VForward Conduction Threshold Voltage, VONTE5374 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1.4VNTE5375 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1.55VForward Conduction Slope Resistance, rNTE5374 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .0.67mΩNTE5375 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .0.87mΩRepetitive Peak Off−State Current (At Rated VDRM), IDRM . . . . . . . . . 30mARepetitive Peak Reverse Current (At Rated VRRM), IRRM . . . . . . . . . . . 30mAMaximum Gate Current Required to Fire All Devices (TJ = +25°C, VA = 6V, IA = 1A), IGT . . 200mAMaximum Gate Voltage Required to Fire All Devices (TJ = +25°C, VA = 6V, IA = 1A), VGT . . .3VMaximum Holding Current (TJ = +25°C, VA = 6V, IA = 1A), IH . . . . . . . . . . . . . . . . .600mAMaximum Gate Voltage Which Will Not Trigger Any Device, VGD . . . . . . . . . . . . . 0.25VTypical Stored Charge (ITM = 300A, dir/dt 20A/μs, VRM = 50V, 50% Chord Value), QrrNTE5374 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25μCNTE5375 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45μCMaximum Circuit Commutated Turn−Off Time, tq(ITM = 300A, dir/dt = 20A/μs, VRM = 50V, dv/dt = 200V/μs to 80% VDRM)NTE5374 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10μsNTE5375 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20μsOperating Temperature Range, TC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .−40° to +125°CStorage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −40° to +150°CThermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . 0.12°C/W


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